Strain-induced compositional shift in the growth of InAsyP1−y onto (100) InP by gas-source molecular beam epitaxy

Autor:	R. V. Kruzelecky, D. Comedi, Richard W. Streater, B. J. Robinson, C. Qiu, D.A. Thompson, G. Balcaitis
Rok vydání:	1992
Předmět:	Physics Analytical chemistry General Physics and Astronomy chemistry.chemical_element Auger chemistry.chemical_compound Arsine chemistry Gas cracker Growth rate Spectroscopy Phosphine Arsenic Molecular beam epitaxy
Zdroj:	Canadian Journal of Physics. 70:886-892
ISSN:	1208-6045 0008-4204
Popis:	The growth of InAsyP1−y onto (100) InP by gas-source molecular beam epitaxy was examined systematically, focusing on control of the resulting As/P incorporation ratio. The group V fluxes were obtained by passing phosphine and arsine through a dual-input low-pressure gas cracker. For a given flow ratio of the source gases, the arsenic fraction y of the resulting InAsyP1−y films is seen to increase with the film thickness over the first 1500 Å (1 Å = 10−10 m) as indicated by secondary ion mass spectroscopy, Auger depth profiling, and by Rutherford backscattering spectroscopy. Thin, strained InAsyP1−y layers (0.30 yP1−y layers, initially enhancing the strain-induced compositional shift. However, strain minimization via a compositional shift competes with a greater rate of relaxation of the InAsP lattice with film thickness at higher substrate temperatures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::927a4f26826cc88e0975cacd89447695 https://doi.org/10.1139/p92-140 Zobrazit plný text záznamu