Low-temperature diffused p–n junction with nano/microrelief interface for solar cell applications
| Autor: | I.B. Mamontova, V.R. Romanyuk, Alexander V. Korovin, O. Yu. Borkovskaya, A. V. Sukach, N. L. Dmitruk |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment Open-circuit voltage business.industry Diffusion Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Dendrite (crystal) Impurity law Nano Solar cell Optoelectronics business p–n junction Layer (electronics) |
| Zdroj: | Solar Energy Materials and Solar Cells. 137:124-130 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/j.solmat.2015.01.019 |
| Popis: | The investigation is aimed at elaboration of technology for submicron p + - GaAs layer formation on micro/nanotextured n -GaAs substrates by using low-temperature (550 °C) diffusion of zinc to take the advantage of optical and recombination properties of textured interface for solar cells. Process duration, surface microrelief morphology (dendrite or quasi-grating (grating-like)) and the substrate doping impurity concentration were varied. Optical, photoelectric and electrical properties of p + – n junction were studied to optimize the process conditions. The highest efficiency was obtained in structures with a quasi-grating surface microrelief, substrate doping close to N d ≃ 10 17 cm − 3 and process duration about 45 min. |
| Databáze: | OpenAIRE |
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