Incorporation Effect of Thin Al2O3Layers on ZrO2–Al2O3Nanolaminates in a Composite Oxide–High-κ-Oxide Stack for Floating-Gate Flash Memory Devices
| Autor: | Se-Aug Jang, Nojung Kwak, Jinwoong Kim, Jaehyoung Koo, Seung-Ho Pyi, Hong-Seon Yang, Moon Sig Joo, Kwon Hong, Jaemun Kim, Seung Ryong Lee, Seung-Woo Shin, Myung-Ok Kim |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon business.industry General Engineering Oxide General Physics and Astronomy chemistry.chemical_element Time-dependent gate oxide breakdown Flash memory chemistry.chemical_compound chemistry Stack (abstract data type) Optoelectronics Grain boundary business Layer (electronics) High-κ dielectric |
| Zdroj: | Japanese Journal of Applied Physics. 46:2193-2196 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.46.2193 |
| Popis: | We demonstrate the electrical properties and reliability of ZrO2–Al2O3 nanolaminates as high-κ dielectric materials in a composite oxide–high-κ-oxide (OKO) stack for floating-gate flash memory devices with 40 nm technology nodes and beyond. The effects of incorporating thin Al2O3 layers into ZrO2 films as an inserting layer and a capping layer on the electrical properties and reliability are discussed. The incorporation of Al2O3 layers significantly improves the leakage current versus the capacitive-equivalent thickness (CET) and TDDB characteristics of the ZrO2–Al2O3 nanolaminate compared with those of the pure ZrO2 owing to the mismatch of the grain boundaries, improved resistance to silicon diffusion, and enhanced energetic-electron hardness of the high-κ film. |
| Databáze: | OpenAIRE |
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