Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory
| Autor: | Yuji Sutou, Yuta Saito, Satoshi Shindo, Yun-Heub Song, Junichi Koike |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Random access memory Materials science Condensed matter physics Mechanical Engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Phase-change material law.invention Amorphous solid Phase change Mechanics of Materials law Memory cell Electrical resistivity and conductivity 0103 physical sciences Electrode General Materials Science Crystallization 0210 nano-technology |
| Zdroj: | Materials Science in Semiconductor Processing. 47:1-6 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2016.02.006 |
| Popis: | We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrode using the circular transfer length method (CTLM). The contact resistivity ρc of as-deposited amorphous GCT to W was 3.9×10−2 Ω cm2. The value of ρc drastically decreased upon crystallization and crystalline GCT that annealed at 300 °C showed a ρc of 4.8×10−6 Ω cm2. The ρc contrast between amorphous (as-deposited) and crystalline (annealed at 300 °C) states was larger in GCT than in conventional Ge2Sb2Te5 (GST). Consequently, it was suggested from a calculation based on a simple vertical structure memory cell model that a GCT memory cell shows a four times larger resistance contrast than a GST memory cell. |
| Databáze: | OpenAIRE |
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