Characterization of deep defects in boron-doped CVD diamond films using transient photocapacitance method
| Autor: | Takanori Hori, Taishi Kodama, Osamu Maida, Toshimichi Ito |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Band gap Mechanical Engineering Exciton Diamond Cathodoluminescence 02 engineering and technology Photoionization Chemical vapor deposition engineering.material 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Spectral line Characterization (materials science) Mechanics of Materials 0103 physical sciences engineering Optoelectronics General Materials Science 0210 nano-technology business |
| Zdroj: | Materials Science in Semiconductor Processing. 70:203-206 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2016.12.001 |
| Popis: | We have developed a highly-sensitive transient photocapacitance measurement (TPM) system for deep defects in wide bandgap materials, and applied it to characterize the boron-doped diamond films grown on a high-pressure/high-temperature-synthesized Ib diamond substrate using high-power-density microwave-plasma chemical vapor deposition method. The developed TPM system has both a low detection limit of less than 0.5 fF for changes in the photocapacitance and a low measurement temperature drift of less than 0.03 K in 12 h. By using the TPM system, we have successfully found an acceptor-type defect around 1.2 eV above the valence-band maximum for the B-doped diamond film with a considerably high crystalline quality that had some strong exciton emission peaks in the cathodoluminescence spectra taken at ≈80 K. The photoionization cross section and the defect density estimated for the observed defect were 3.1×10 –15 cm 2 and 2.8×10 16 cm −3 , respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect