Stress relaxation in tungsten films by ion irradiation
| Autor: | K. S. Boutros, J. Barone, E. Snoeks |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Ion beam mixing Physics::Instrumentation and Detectors Analytical chemistry chemistry.chemical_element Chemical vapor deposition Tungsten equipment and supplies Stress (mechanics) Condensed Matter::Materials Science chemistry Stress relaxation Deposition (phase transition) Irradiation Thin film |
| Zdroj: | Applied Physics Letters. 71:267-269 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.119515 |
| Popis: | Tungsten films, grown by plasma-enhanced chemical vapor deposition for very large scale integration interconnect applications, suffer from a high internal tensile stress that leads to contact failure. We show with wafer curvature measurements that the stress can be relaxed via viscous flow at room temperature by irradiating the films with energetic ions after deposition. Transmission electron microscopy does not indicate significant structural changes in the W films during irradiation. We varied the irradiation conditions (from 140 keV B ions to 400 keV P ions) and find that the flow rate scales with the nuclear stopping power. Similarities and differences with beam-induced mixing and diffusion are discussed. |
| Databáze: | OpenAIRE |
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