Tungsten Incorporation into Gallium Oxide: Crystal Structure, Surface and Interface Chemistry, Thermal Stability, and Interdiffusion
| Autor: | E. J. Rubio, Manjula I. Nandasiri, Vaithiyalingam Shutthanandan, Sandeep Manandhar, T. E. Mates, Chintalapalle V. Ramana |
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| Rok vydání: | 2016 |
| Předmět: |
Valence (chemistry)
Inorganic chemistry Analytical chemistry chemistry.chemical_element 02 engineering and technology Tungsten 010402 general chemistry 021001 nanoscience & nanotechnology Microstructure 01 natural sciences Nanocrystalline material 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials General Energy X-ray photoelectron spectroscopy chemistry Sputtering Physical and Theoretical Chemistry Thin film 0210 nano-technology Monoclinic crystal system |
| Zdroj: | The Journal of Physical Chemistry C. 120:26720-26735 |
| ISSN: | 1932-7455 1932-7447 |
| DOI: | 10.1021/acs.jpcc.6b05487 |
| Popis: | Tungsten (W) incorporated gallium oxide (Ga2O3) (GWO) thin films were deposited by radio-frequency magnetron cosputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying sputtering power applied to the W-target in order to achieve variable W-content (0–12 at. %) into Ga2O3 while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure, and crystal structure of as-deposited and annealed GWO films were evaluated as a function of W-content. The structural and chemical analyses indicate that the samples deposited without any W-incorporation are stoichiometric, nanocrystalline Ga2O3 films, which crystallize in β-phase monoclinic structure. While GWO films also crystallize in monoclinic β-Ga2O3 phase, W-incorporation induces surface amorphization as revealed by structural studies. The chemical valence state of Ga ions probed by X-ray photoelectron spectroscopic (XPS) analyses is characterized by the highest oxidation state, i.e., Ga3+.... |
| Databáze: | OpenAIRE |
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