Design windows for low-high-low GaAs IMPATT's

Autor:	D.J. Coleman, M.R. Namordi
Rok vydání:	1980
Předmět:	Materials science IMPATT diode business.industry Optoelectronics Electrical and Electronic Engineering business Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 27:282-286
ISSN:	0018-9383
DOI:	10.1109/t-ed.1980.19851
Popis:	An idealized device model is employed to determine the optimum material parameters for low-high-low (LHL) GaAs IMPATT's. Experimental efficiencies of 15-GHz devices indicate the model is of considerable utility for LHL GaAs IMPATT design.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::925977cef39c48e030817e6134e202cf https://doi.org/10.1109/t-ed.1980.19851 Zobrazit plný text záznamu