White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
| Autor: | Kiyoshi Yasutake, Takayoshi Shimura, Kazunori Fukuda, Masataka Umeno, Satoshi Iida, Takayoshi Yoshida |
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| Rok vydání: | 2006 |
| Předmět: |
Diffraction
Materials science Physics and Astronomy (miscellaneous) Physics::Instrumentation and Detectors business.industry Astrophysics::High Energy Astrophysical Phenomena General Engineering Streak Physics::Optics General Physics and Astronomy Silicon on insulator Synchrotron radiation Synchrotron Computer Science::Other law.invention Reciprocal lattice Optics law Monochromatic color Thin film business |
| Zdroj: | Japanese Journal of Applied Physics. 45:6795-6799 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.45.6795 |
| Popis: | The lattice undulation of a silicon-on-insulator (SOI) layer in bonded SOI wafers was observed by synchrotron white and monochromatic X-ray topographies. Pattern formation for white X-ray topography was discussed using the geometric relation among the Bragg streak and diffracted X-rays in reciprocal space. The diffraction images in white X-ray topographs were simulated using the angular distributions of the lattice inclination in SOI layers obtained by the analysis of monochromatic X-ray topographs. The results of this simulation were in very good agreement with observations including the dependences on camera distance and SOI layer thickness, indicating that the contrast is mainly formed by the divergence/convergence effect of the diffracted X-rays. |
| Databáze: | OpenAIRE |
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