Construction of high conductivity in Si by PBW technology

Autor:	O. Kukharenko, O. Kozonushchenko, M. Tolmachov, T. Vasiliev, A. Vasiljev
Rok vydání:	2017
Předmět:	Materials science Hydrogen Silicon business.industry chemistry.chemical_element Conductivity Proton beam writing Ion chemistry Electrical resistivity and conductivity Optoelectronics Irradiation business Layer (electronics)
Zdroj:	2017 IEEE International Young Scientists Forum on Applied Physics and Engineering (YSF).
DOI:	10.1109/ysf.2017.8126670
Popis:	By means of PBW (Proton Beam Writing) technology n-Si monocrystal was irradiated. The energy of ions H+ was 1.5 MeV. The integrated dose was 2•1015 p/cm2. This treatment of the sample led to modification of the electrical properties of the material. Two layers were appeared under the surface of the silicon. The first one had higher resistivity than non-irradiated Si. The second one formed with much lower resistivity than non-irradiated Si. PBW technology allows to create a layer with a significantly exceeding conductivity under the silicon surface.
Databáze:	OpenAIRE
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