SiGe HBT technology design approaches for RF-applications
| Autor: | B.G. Malm, M. Ostling |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Doping Process (computing) Hardware_PERFORMANCEANDRELIABILITY Epitaxy Hardware_INTEGRATEDCIRCUITS Electronic engineering Wireless Optoelectronics Parasitic extraction business Hardware_LOGICDESIGN Design technology Intermodulation |
| Zdroj: | The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003.. |
| DOI: | 10.1109/edmo.2003.1259975 |
| Popis: | In this paper the current status of SiGe bipolar technologies for high-speed and wireless applications is discussed. The key process features and RF performance of advanced SiGe bipolar processes are summarized. In particular the importance of carbon doping for improved doping profile control and self-aligned structures for reduced device parasitics is discussed. As an example of advanced process features a novel collector structure, using selective epitaxy is presented. Optimization of device RF performance is also discussed, and in particular the RF-distortion. A mixed-mode device and circuit simulation methodology has been used to investigate the influence of collector doping and Ge-profiles on the intermodulation distortion. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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