Low temperature plasma deposition of silicon thin films: From amorphous to crystalline
| Autor: | P. Roca i Cabarrocas, Romain Cariou, M. Labrune |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Silicon business.industry Nanocrystalline silicon chemistry.chemical_element Strained silicon Nanotechnology Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Monocrystalline silicon chemistry Plasma-enhanced chemical vapor deposition Materials Chemistry Ceramics and Composites Optoelectronics Crystalline silicon LOCOS business |
| Zdroj: | Journal of Non-Crystalline Solids. 358:2000-2003 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/j.jnoncrysol.2011.12.113 |
| Popis: | We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175 °C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of silicon nanocrystals and point toward silicon nanocrystals being the most plausible building blocks for such epitaxial growth. The results lay the basis of a new approach for the obtaining of crystalline silicon thin films and open the path for transferring those epitaxial layers from c-Si wafers to low cost foreign substrates. |
| Databáze: | OpenAIRE |
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