Impact of proximity correction on device yield in electron-beam definition of MSM-detectors
| Autor: | T. Hackbarth, B. E. Maile, T. Waas |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
Proximity effect (electron beam lithography) business.industry Monte Carlo method Transistor Detector Photodetector Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Optics Optical proximity correction law Figure of merit Deconvolution Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 30:35-40 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(95)00189-1 |
| Popis: | The influence of proximity correction on device yield and process latitude in electron-beam fabrication of short-period metal-semiconductor-metal (MSM) photodetectors is investigated. A modified Fourier-transform deconvolution method is used for proximity correction. Scattering data is obtained from Monte Carlo simulation, without the need for costly experimental parameter determination. Proximity correction leads to a significant improvement in device yield and process latitude. Figures of merit for latitude enhancement typically are in the range 2…10, depending on device geometry and process context. For a field-effect transistor compatible process technology, MSM devices with finger periods down to 200 nm can be realized using proximity corrected exposure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect