Study of doping of InxGa1−xAs films with germanium

Autor: R. I. Bolkhovityanova, Yu. B. Bolkhovityanov, N. E. Marchenko, B. V. Morozov
Rok vydání: 1975
Předmět:
Zdroj: Physica Status Solidi (a). 31:293-300
ISSN: 1521-396X
0031-8965
DOI: 10.1002/pssa.2210310134
Popis: InxGa1−xAs: Ge films (x ≦ 0.12) grown form the solution in a broad temperature range are investigated. It is found that the donor density in the solid phase increases with increasing growth temperature and fraction of In in the solution while the acceptor density is practically independent of these parameters and the growth direction. It is observed that Nd(111)B > Nd(111)A and (Nd/Na)(111)B > (Nd/Na)(111)A for all the liquid phase compositions investigated. Therefore p(111)B < p(111)A, and this inequality becomes stronger with increasing x. The (111)B films have a less homogeneous profile of the carrier distribution along the thickness than the (111)A-oriented films. An inhomogeneity of this profile becomes greater with increasing fraction of In in the solution. Under some conditions, a p–n junction, whose distance from a substrate rises with increasing x, is formed in films having the (111)B orientation. [Russian Text Ignored].
Databáze: OpenAIRE
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