| Popis: |
Doping is essential in the growth of bulk Ga2O3 substrates, which could help control the electrical and optical properties to meet the requirements of various types of Ga2O3-based devices. The n type β-Ga2O3 materials with dopants including Sn, Al, Si, H et al have been successfully carried out. To further improve its conductivity and optical properties, the finding of p type β-Ga2O3 becomes very crucial. This paper reviews the efforts about such an issue with experimental and theoretical methods, describes the achievements and limitations up to now and proposes the possible research methods to achieve the p type β-Ga2O3 material. |
