Suppression of stress induced open failures between via and Cu wide line by inserting Ti layer under Ta/TaN barrier

Autor:	Masayuki Hiroi, Naoya Furutake, Makoto Ueki, T. Onodera, Nobuyuki Ikarashi, Yoshihiro Hayashi, M. Yoshiki
Rok vydání:	2003
Předmět:	Void (astronomy) Materials science Metallurgy Stress induced Tantalum chemistry.chemical_element Copper Electromigration Metal chemistry Electrical resistivity and conductivity visual_art visual_art.visual_art_medium Composite material Titanium
Zdroj:	Digest. International Electron Devices Meeting.
Popis:	We verified the effect of Ti layer insertion on stress induced void formation in wide Cu lines where voids were formed under via. In order to improve adhesion property between via and underlying Cu, PVD-Ti was inserted under Ta/TaN barrier. When nominal 30 nm thick PVD-Ti layer was inserted (Ti thickness at via bottom was about 8 nm), the failure was sufficiently suppressed without degrading the electromigration resistance. In addition, the via resistance was reduced by 25% compared with conventional Ta/TaN barrier structure, while the Cu metal resistivity was unchanged by the Ti insertion.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::91ffd8a27d2761ff5d19562b857d0b2b https://doi.org/10.1109/iedm.2002.1175946 Zobrazit plný text záznamu