Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETs

Autor:	Lars Knoll, Stephan Wirths, Andrei Mihaila, Daniele Torresin, G. Romano, Enea Bianda
Rok vydání:	2020
Předmět:	Materials science Mechanics of Materials business.industry Mechanical Engineering Optoelectronics General Materials Science High voltage Condensed Matter Physics business Diode Degradation (telecommunications)
Zdroj:	Materials Science Forum. 1004:814-821
ISSN:	1662-9752
Popis:	The aim of this study is to investigate the main contributing factors to the degradation of the intrinsic body diode in SiC MOSFETs, caused by the expansion of stacking faults (SFs) from the substrate into the epitaxial layer, and how it affects their performance. Additionally, a comparison between DC forward current stress and surge current pulse stress is shown.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::91fd0d2bd065159f45d3ff7338709d0e https://doi.org/10.4028/www.scientific.net/msf.1004.814 Zobrazit plný text záznamu