Impact of interface impurities on heterostructure field-effect transistors
| Autor: | H.-H. Vuong, L.J. Peticolas, C.L. Reynolds |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Materials science
business.industry Fermi level Doping Heterojunction Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Electronic Optical and Magnetic Materials Gallium arsenide Threshold voltage symbols.namesake chemistry.chemical_compound chemistry symbols Electronic engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 39:2459-2464 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.163458 |
| Popis: | The influence of C and Si impurities at the substrate/epitaxy interface on the threshold voltage of GaAs/AlGaAs selectively doped heterostructure transistors has been investigated both experimentally and theoretically using a one-dimensional simulation. The presence of C raises the conduction band relative to the Fermi level and reduces the electron density in the channel. This results in a positive shift of the depletion-mode (DFET) threshold voltage as the interfacial C concentration increases. For low C concentrations the DFET threshold voltage decreases with increasing Si at the interface. The impact of interfacial C and Si is small on the enhancement-mode (EFET) threshold voltage. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|