High power 3-phase to 3-phase matrix converter using dual-gate GaN bidirectional switches
| Autor: | Tetsuzo Ueda, Yasuhiro Yamada, Hiroaki Ueno, Kenichi Asanuma, Hidetoshi Ishida, Fumito Kusama, Tsuguyasu Hatsuda, Yusuke Kinoshita, Hidekazu Umeda |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry 05 social sciences Bipolar junction transistor Energy conversion efficiency Phase (waves) 020207 software engineering Gallium nitride 02 engineering and technology Power (physics) chemistry.chemical_compound chemistry 0202 electrical engineering electronic engineering information engineering Breakdown voltage Optoelectronics 0501 psychology and cognitive sciences business 050107 human factors Diode Voltage |
| Zdroj: | 2018 IEEE Applied Power Electronics Conference and Exposition (APEC). |
| DOI: | 10.1109/apec.2018.8341119 |
| Popis: | Highly efficient three-phase to three-phase matrix converters using Gallium nitride (GaN) bidirectional switches with both high current and high breakdown voltage are demonstrated. The GaN switch with dual gates works as a bidirectional switch by a single device, while a conventional bidirectional switch consists of four devices by two Insulated Gate Bipolar Transistors (IGBTs) and two diodes. In addition, the GaN bidirectional switch is also free from the voltage offsets for the current conduction so that the GaN-based matrix converter enables small size and highly efficient AC/AC conversion. Improvement of the device performance including the introduction of the recessed gate enables the low on-state resistance with stable operation free from current collapse. The maximum drain current reaches 100 A together with the breakdown voltage of 1340 V. The fabricated three-phase to three-phase matrix converter exhibits the maximum conversion efficiency of 98% at 1 kW output power with the expectation that the maximum output power can reach 10 kW or more by the high current device. |
| Databáze: | OpenAIRE |
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