Towards Full-area Passivating Contacts for Silicon Surfaces based on Al2O3-TiOx Double Layers
| Autor: | Thomas Mikolajick, Matthias Grube, Johann W. Bartha, Martin Knaut, Johanna Reif, David Tröger |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Double layer (biology) Materials science Silicon Passivation business.industry Doping chemistry.chemical_element 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology 01 natural sciences Atomic layer deposition chemistry Stack (abstract data type) Sputtering 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). |
| DOI: | 10.1109/pvsc.2018.8547656 |
| Popis: | In order to remove the local openings for contacting PERC Solar cells, one has to introduce passivating contacts. The Al 2 O 3 -TiO x double layer stack is an attractive candidate for this purpose. This study will guide a way to enhance the conductivity of those contacts by doping TiO x with a. Additionally, it is shown, that major parts of the stacks are deposited by sputtering. This demonstrates a higher feasibility for industrial applications than atomic layer deposition as reported earlier [1], [2]. |
| Databáze: | OpenAIRE |
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