Performance of Fe3O4/AlOx/CoFe magnetic tunnel junctions based on half-metallic Fe3O4 electrodes

Autor:	Ja Hyun Koo, Jin Pyo Hong, Chae Ok Kim, Young Ho Do, Ki Woong Kim, Kap Soo Yoon
Rok vydání:	2005
Předmět:	Materials science Spintronics Magnetoresistance Electrical breakdown Analytical chemistry Condensed Matter Physics Electronic Optical and Magnetic Materials Root mean square Metal Nuclear magnetic resonance visual_art Electrode visual_art.visual_art_medium Thin film Quantum tunnelling
Zdroj:	Journal of Magnetism and Magnetic Materials. 285:125-129
ISSN:	0304-8853
DOI:	10.1016/j.jmmm.2004.07.025
Popis:	Magnetic tunnel junctions (MTJs) with Fe 3 O 4 electrodes were prepared to observe spin- dependent tunneling effect of half-metallic materials through an insulating AlO x barrier at room temperature (RT). In addition, the plasma treatment with Ar gas was in situ performed to improve surface morphology of an as-deposited Fe 3 O 4 electrode. After Ar plasma treatment, the root mean square of as-deposited Fe 3 O 4 thin film was decreased from 4.5 A to 2.5 A. Magnetoresistance (MR) and electrical breakdown voltage of the MTJ were found to be 11% and 0.8 V at RT, respectively. This large MR value is ascribed to the enhanced surface morphology of Fe 3 O 4 electrode after plasma treatment. This MR value at RT gives a potential way of using Fe 3 O 4 thin films in the spintronic devices, together with the enhanced surface treatment technique.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::91c8106213f7901e7c51e69989b8bb11 https://doi.org/10.1016/j.jmmm.2004.07.025 Zobrazit plný text záznamu Full Text from ScienceDirect