Effect of Growth Temperature on Cobalt-Doped TiO2 Thin Films Deposited on Si (100) Substrate by MOCVD Technique

Autor:	Aip Saripudin, H. Saragih, null Khairurrijal, Pepen Arifin
Rok vydání:	2014
Předmět:	Anatase Materials science General Engineering chemistry.chemical_element Substrate (electronics) Chemical vapor deposition chemistry.chemical_compound Crystallography Carbon film chemistry Chemical engineering Titanium dioxide Metalorganic vapour phase epitaxy Thin film Cobalt
Zdroj:	Advanced Materials Research. 896:192-196
ISSN:	1662-8985
Popis:	Co:TiO2 (cobalt-doped titanium dioxide) thin films have been deposited on the n-type Si (100) substrate at the temperatures range of 325°C 450°C using MOCVD (metal organic chemical vapor deposition) technique. We investigated the effect of growth temperature on the structural and morphological quality of Co:TiO2 thin films. The structure of Co:TiO2 thin films were characterized by XRD while the morphology and the thickness of films were characterized by SEM. The XRD results reveal that all films show the anatase structure and the dominant orientation of anatase phase depends on the growth temperature. The grain size of crystal increases as the growth temperature increases. We also reveal that the growth rate of Co:TiO2 film has a maximum value at the growth temperature of 400°C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::91bbe9cb5e8b5a5210933b826825267c https://doi.org/10.4028/www.scientific.net/amr.896.192 Zobrazit plný text záznamu