Analyses of single crystal diamond substrates grown in a pocket substrate holder via MPACVD
| Autor: | Shreya Nad, Jes Asmussen |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Nanotechnology 02 engineering and technology Substrate (electronics) Chemical vapor deposition engineering.material 01 natural sciences Etch pit density Etching (microfabrication) 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Deposition (law) 010302 applied physics business.industry Mechanical Engineering Diamond General Chemistry 021001 nanoscience & nanotechnology Ion source Electronic Optical and Magnetic Materials Torr engineering Optoelectronics 0210 nano-technology business |
| Zdroj: | Diamond and Related Materials. 66:36-46 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2016.03.007 |
| Popis: | High quality single crystal diamond (SCD) substrates are required for several different important current applications. Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) is a convenient deposition method for high quality substrates. It is hence imperative to synthesize and analyze substrates grown via different CVD techniques. This paper describes the quality of single crystal diamond substrates which have been grown via one such deposition strategy, which is in a “pocket substrate holder” design. The growth process in such a holder helps in depositing substrates which have almost no polycrystalline diamond (PCD) rim growth. The exact pocket holder growth process at high pressures (240 Torr) and high microwave power densities (~ 500 W/cm 3 ) has been discussed in a previous publication [1]. The SCD CVD substrates were analyzed with different characterization techniques. By synthesizing diamond substrates in a pocket holder, the lack of any/almost any PCD rim helped in reducing the amount of stress in the crystals. To study the electronic quality of the substrates, etching experiments were conducted to determine the etch pit density. Nomarski images confirm that the number of etch pits at the edges is higher than at the center of the etched surface thereby implying the feasibility of this simpler method of reducing the etch pit density. The pocket holder process thus not only reduces the PCD rim but also reduces the substrate etch pit density and hence shows good promise of delivering high quality substrates. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect