Enhanced Reliability and Performance of High-k MOSFET by Two-Step Annealing
| Autor: | Dongsoo Lee, Hokyung Park, Hyunsang Hwang, M. Shahriar Rahman, Man Chang, Byoung Hun Lee |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) General Chemical Engineering Dangling bond Oxide Threshold voltage chemistry.chemical_compound chemistry MOSFET Electrochemistry Optoelectronics General Materials Science Field-effect transistor Electrical and Electronic Engineering Physical and Theoretical Chemistry business High-κ dielectric Hot-carrier injection |
| Zdroj: | Electrochemical and Solid-State Letters. 9:G127 |
| ISSN: | 1099-0062 |
| DOI: | 10.1149/1.2168287 |
| Popis: | The effect of high pressure (HP) H 2 /D 2 annealing and subsequent N 2 annealing, to enhance reliability, on hafnium-based high-k metal oxide semiconductor field effect transistor (MOSFET) has been studied. HP hydrogen annealing effectively passivates dangling bonds which in turn reduce the interface state density. Additional annealing in nitrogen ambient reduces threshold voltage shifts (ΔV th ) due to bias temperature instability and hot carrier injection. This improvement due to subsequent annealing might be related with the annihilation of hydrogen-related trapping sites from the high-k bulk. Since charge trapping is attributed mainly to dangling bonds at the interface and excess hydrogen species in the bulk of the high-k oxide, by optimizing annealing conditions, both reliability and performance of high-k MOSFETs are improved. |
| Databáze: | OpenAIRE |
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