X-ray photoelectron spectroscopy study of CuFeSe2 thin films
| Autor: | A. Khelil, N. Hamdadou, J.C. Bernède |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Radiation
Thin layers Materials science Analytical chemistry chemistry.chemical_element Electron microprobe Condensed Matter Physics Copper Evaporation (deposition) Electron spectroscopy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Vacuum evaporation chemistry X-ray photoelectron spectroscopy Physical and Theoretical Chemistry Thin film Spectroscopy |
| Zdroj: | Journal of Electron Spectroscopy and Related Phenomena. 141:61-66 |
| ISSN: | 0368-2048 |
| DOI: | 10.1016/j.elspec.2004.07.003 |
| Popis: | CuFeSe 2 , which belongs to the I II IV 2 chalcogene family, has been prepared in thin films form by selenization of CuFe precursor. Cu/Fe/Cu… thin layers have been sequentially deposited by vacuum evaporation on a substrate heated at a temperature T s = 450 °C. It has been checked by X-ray photoelectron spectroscopy (XPS) that there is Cu, Fe interdiffusion in the precursor. Since the samples are exposed to air there is some copper and iron oxidation at the surface, but there is no oxygen in the bulk. These precursors are selenized in a vacuum chamber using a Se source (evaporation rate 3–4 nm s −1 ). The selenization duration is 45 min. At the end of the process the structure of the film is the expected tetragonal structure of CuFeSe 2 . The XPS study shows that there is no oxygen contamination of the film, excepted the surface because it has been exposed to air. The composition measured is in good agreement with that measured by electron microprobe analysis. The binding energies measured show that there is, as expected, some electron transfer from metals to the chalcogene, with Cu 2p 3/2 = 932.60 eV, Fe 2p 3/2 = 708.15 eV and Se 3d = 53.90 eV. |
| Databáze: | OpenAIRE |
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