The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers
| Autor: | H.C Lee, S Vanhaelemeersch |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Masking (art)
Materials science Metallurgy Metals and Alloys chemistry.chemical_element Surfaces and Interfaces Plasma Tungsten Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Etch pit density Etching (microfabrication) Materials Chemistry Grain boundary Composite material Tin Layer (electronics) |
| Zdroj: | Thin Solid Films. 320:147-150 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(97)01079-1 |
| Popis: | In this paper, we present the study of the tungsten (W) etch rate as a function of different masking materials: Ti/TiN and SiO 2 . In addition, the impact of the W grain boundary orientation on the etch rate is established. With the use of a SiO 2 masking layer, the W etch rate is five times higher compared to etching with a Ti/TiN masking film. The blanket W etch rate is the average of these two values. The difference of etch rate with respect to the orientations of grain boundaries is only detected in pure SF 6 plasma. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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