CdS barrier to minimize Zn loss during CdCl2 treatment of Cd-Zn-Te absorbers
| Autor: | Kurt L. Barth, Tushar M. Shimpi, Jennifer Drayton, Walajabad S. Sampath, Ali Abbas, John M. Walls, Drew E. Swanson |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Fabrication Renewable Energy Sustainability and the Environment Band gap business.industry Energy-dispersive X-ray spectroscopy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Transmission electron microscopy 0103 physical sciences Optoelectronics General Materials Science Atomic ratio Quantum efficiency Crystallite Thin film 0210 nano-technology business |
| Zdroj: | Solar Energy. 173:1181-1188 |
| ISSN: | 0038-092X |
| DOI: | 10.1016/j.solener.2018.08.060 |
| Popis: | A major challenge in the fabrication of high band gap II–VI polycrystalline solar cells is to preserve the original composition of the absorber after the CdCl2 activation treatment. In this study, a method is demonstrated to maintain the Cd-Zn-Te alloy absorber composition during its exposure to the CdCl2 treatment. A thin film of CdS was applied as a barrier on the back surface of the high band gap polycrystalline Cd(1−x)ZnxTe (x = 20% by atomic ratio, corresponding band gap 1.72 eV) before the CdCl2 treatment. Using transmission electron microscopy and energy dispersive spectroscopy, it was observed that the composition of Cd-Zn-Te was maintained after the CdCl2 treatment. The devices fabricated after removing the thin film of CdS, exhibited diode-like behavior. A significant increase in the quantum efficiency near the short wavelength region was observed, and the band gap of Cd(1−x)ZnxTe was maintained. |
| Databáze: | OpenAIRE |
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