In2Se3 Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response
| Autor: | Roop K. Mech, Swanand V. Solanke, Digbijoy N. Nath, Neha Mohta, Muralidharan Rangarajan |
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| Rok vydání: | 2019 |
| Předmět: |
Photoluminescence
Materials science Analytical chemistry chemistry.chemical_element Photodetector 02 engineering and technology Specific detectivity Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Wavelength Responsivity 020210 optoelectronics & photonics chemistry 0202 electrical engineering electronic engineering information engineering Sapphire Electrical and Electronic Engineering Indium Dark current |
| Zdroj: | IEEE Photonics Technology Letters. 31:905-908 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2019.2912912 |
| Popis: | We report on the demonstration of visible/near-IR high-performance photodetector based on exfoliated $\beta $ -Indium selenide (In2Se3) on sapphire with a clear signature of band edge in spectral responsivity at a wavelength of ~850–900 nm. Room temperature photoluminescence (PL) measurements also indicated a peak at ~900 nm confirming the band-edge. Devices with inter-digitated metal-semiconductor-metal (MSM) geometry exhibited a responsivity of 3.8 A/W (normalized to device area). A low dark current of 0.80 nA and a photo to dark current ratio of ~52 were measured when illuminated with 650 nm A specific detectivity of $1 \times 10^{10}$ cm Hz $^{0.5}\,\,\text{W}^{-1}$ at 650 nm and $6 \times 10^{8}$ cm Hz $^{0.5}\,\,\text{W}^{-1}$ at the band-edge of 900 nm were estimated. These results indicate the promise of $\beta $ -(In2Se3) for visible/near-IR detector applications. |
| Databáze: | OpenAIRE |
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