Depolarization ofμ + muons in GaAs single crystals
Autor: | S. G. Barsov, S. P. Kruglov, S. M. Mikirtych'yants, G. I. Savel'Ev, Yu. V. Obukhov, V. A. Gordeev, E. V. Minaichev, A. L. Getalov, V. G. Firsov, L. A. Kuzmin, G.G. Myasishcheva, V. I. Kudinov, G. V. Shcherbakov |
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Rok vydání: | 1984 |
Předmět: |
Nuclear and High Energy Physics
Muon Materials science Condensed matter physics business.industry Depolarization Condensed Matter Physics Atomic and Molecular Physics and Optics Gallium arsenide chemistry.chemical_compound Semiconductor High resistivity chemistry Optoelectronics Physical and Theoretical Chemistry business Single crystal |
Zdroj: | Hyperfine Interactions. 18:635-638 |
ISSN: | 1572-9540 |
Popis: | AμSR study has been carried out on high resistivity single crystal gallium arsenide (GaAs). Three characteristic states involving theμ+ muon (Mu*, Mu,μ+ were shown to exist in a binary semiconductor, similar to the case of elemental semiconductors. |
Databáze: | OpenAIRE |
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