Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers
| Autor: | Kwang Hong Lee, David Kohen, Kenneth Eng Kian Lee, Xuan Sang Nguyen, Christopher Heidelberger, Eugene A. Fitzgerald, Riko I Made |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Composite number chemistry.chemical_element 02 engineering and technology Substrate (electronics) Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Buffer (optical fiber) Inorganic Chemistry chemistry 0103 physical sciences Materials Chemistry Surface roughness Optoelectronics Metalorganic vapour phase epitaxy Dislocation 0210 nano-technology business |
| Zdroj: | Journal of Crystal Growth. 478:64-70 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2017.08.025 |
| Popis: | Compositionally graded InAlAs buffers grown by metal–organic chemical vapor deposition are impaired by phase separation occurring at In content higher than 35%. Phase separation results in rough epilayers with poor crystalline material quality. By introducing low temperature grown InGaAs interlayers in the compositionally graded InAlAs buffer, the surface roughness decreases, allowing a grading of up to In 0.60 Al 0.40 As without any phase separation occurring. This composite buffer is applied to fabricate a 200 mm diameter InP-on-Si virtual substrate with a threading dislocation density around 1 × 10 8 cm −2 . |
| Databáze: | OpenAIRE |
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