Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor
| Autor: | Chun-Hu Cheng, Chun-Yuan Tu, Chia-Chi Fan, Hsiao-Hsuan Hsu, Chun-Yen Chang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Dopant business.industry Transistor Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences Ferroelectricity Capacitance Electronic Optical and Magnetic Materials law.invention CMOS law Logic gate 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Hardware_LOGICDESIGN Negative impedance converter |
| Zdroj: | IEEE Transactions on Electron Devices. 66:825-828 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2018.2881099 |
| Popis: | For the first time, we successfully demonstrated the dopant-free HfO2 negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the reduction of the monoclinic phase suppressed with the thickness scaling and gate stress engineering favorably rearranging oxygen vacancies to boost orthorhombic phase transition. The highly scalable and dopant-free NC transistor shows the potential for the application of advanced CMOS technology. |
| Databáze: | OpenAIRE |
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