Intensity and Phase Modulators in Epitaxial III-V Layers Directly Grown on Silicon Operating at 1.55 µm
| Autor: | John E. Bowers, Justin Norman, Prashanth Bhasker, Nadir Dagli |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Silicon business.industry Phase (waves) chemistry.chemical_element 02 engineering and technology Chemical vapor deposition Epitaxy 020210 optoelectronics & photonics Amplitude chemistry Modulation Physical vapor deposition Electrode 0202 electrical engineering electronic engineering information engineering Optoelectronics business |
| Zdroj: | Frontiers in Optics 2017. |
| Popis: | We report for the first time electro-optic phase and amplitude modulators in GaAs/AlGaAs epitaxial layers grown on Si substrates. Intensity modulators with 4-mm long electrodes have Vπ of 3.59V corresponding to 1.44 V-cm modulation efficiency. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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