| Autor: |
Colin McDonough, Benjamin Backes, Wei Wang, Robert E. Geer, R. Caramto |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 IEEE International Interconnect Technology Conference. |
| DOI: |
10.1109/iitc.2011.5940275 |
| Popis: |
The thermal and spatial variation of Cu TSV-induced stress has been investigated for 1×4 arrays of 5 µm diameter × 50 µm TSVs using microRaman imaging. Following post-CMP annealing the measured Si Raman shift outside the TSV array is slightly modified. In strong contrast, the Si Raman shift midway between TSVs transitions from a tensile to compressive state as the annealing temperature increases. Topographic analysis implies this shift is associated with thermally-induced Cu extrusion. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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