Design of Power Amplifiers Using Stacked Topology
| Autor: | Fan-Hsiu Huang, G.D. Vendelin, Chih-Chun Shen, Kung-Hao Liang, Hong-Yeh Chang, Yi-Jen Chan |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Engineering
business.industry Heterojunction bipolar transistor Amplifier Transistor Electrical engineering Topology (electrical circuits) Base (topology) Topology Network topology law.invention Power (physics) Capacitor Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Electronic engineering business |
| Zdroj: | 2007 Asia-Pacific Microwave Conference. |
| DOI: | 10.1109/apmc.2007.4554963 |
| Popis: | This paper presents the design considerations for a stacked transistor topology for power amplifier design. A HBT is used to show at 1 GHz the effect of bias, device size, and matching, including interstage matching, which has had no beneficial effect so far. Most important is the base capacitor termination of the top transistors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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