Advanced wiring RC delay issues for sub-0.25-micron generation CMOS

Autor:	M.B. Fuselier, A.K. Stamper, X. Tian
Rok vydání:	2002
Předmět:	Materials science business.industry Copper interconnect chemistry.chemical_element RC time constant Capacitance Copper CMOS chemistry Electrical resistance and conductance Chemical-mechanical planarization Electronic engineering Optoelectronics business Sheet resistance
Zdroj:	Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
Popis:	Measured and modeled back-end-of-the-line (BEOL) RC delay data are presented for multilevel sub-0.25 /spl mu/m generation CMOS ICs. The aluminum and copper BEOL levels were fabricated using metal RIE and damascene processing, respectively. Aluminum BEOL RC variability increases with increasing line height and is primarily caused by within-wafer intermetal dielectric (IMD) CMP removal variation and wafer-to-wafer variation in the printed and etched metal linewidths. Copper BEOL RC variability decreases with increasing line height and is dominated by metal CMP variation for thin lines and by metal trough IMD RIE depth and width tolerances for thick lines. In addition to having 40% lower sheet resistance, copper also has lower BEOL RC variability than aluminum and offers more design flexibility for BEOL RC delay and crosstalk noise optimization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9171f2274b03988ed40698bd6fc27e35 https://doi.org/10.1109/iitc.1998.704752 Zobrazit plný text záznamu