Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

Autor:	Oleg G. Okhotnikov, V. A. Shchukin, Axel Hoffmann, A. S. Payusov, Mikhail V. Maximov, Yu. M. Shernyakov, Felix Nippert, S. Schlichting, N. Yu. Gordeev, N. N. Ledentsov, J. Lyytikäinen
Rok vydání:	2014
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Heterojunction Electroluminescence Cladding (fiber optics) law.invention Transmission electron microscopy law Optoelectronics business Current density Diode Molecular beam epitaxy Light-emitting diode
Zdroj:	Applied Physics Letters. 105:181902
ISSN:	1077-3118 0003-6951
Popis:	We report on green (550–560 nm) electroluminescence (EL) from (Al0.5Ga0.5)0.5In0.5P–(Al0.8Ga0.2)0.5In0.5P double p–i–n heterostructures with monolayer–scale tensile strained GaP insertions in the cladding layers and light–emitting diodes (LEDs) based thereupon. The structures are grown side–by–side on high–index and (100) GaAs substrates by molecular beam epitaxy. Cross–sectional transmission electron microscopy studies indicate that GaP insertions are flat, thus the GaP–barrier substrate orientation–dependent heights should match the predictions of the flat model. At moderate current densities (~500 A/cm 2 ) the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)–grown strictures, the EL spectra of (211) and (311)–grown devices are shifted towards shorter wavelengths (~550 nm at room temperature). At high current densities (>1 kA/cm 2
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9169ecde32c902174de85e7f3db2f79f https://doi.org/10.1063/1.4900938 Zobrazit plný text záznamu