Use of Laser to Explain Heavy Ion Induced SEFIs in SDRAMs

Autor:	F. Moliere, Florent Miller, R. Gaillard, N. Buard, N. Guibbaud, Antonin Bougerol
Rok vydání:	2010
Předmět:	Pulsed laser Nuclear and High Energy Physics Materials science Nuclear Energy and Engineering law Electronic engineering Heavy ion Electrical and Electronic Engineering Radiation Laser Molecular physics Ion law.invention
Zdroj:	IEEE Transactions on Nuclear Science. 57:272-278
ISSN:	1558-1578 0018-9499
DOI:	10.1109/tns.2009.2037418
Popis:	In this work, using heavy ion and pulsed laser tests on a 110 nm 256 Mbit SDRAM, different SEFI types and other logic-related radiation effects are studied and explained. Effects seen using heavy ions were reproduced and localized on the die with the laser. Among the effects, Fuse-Latch Upsets were found to be responsible of typical addressing errors and were more particularly investigated. Moreover, an unusual logic-related effect, called SET in Voltage Buffer, was induced using heavy ions, and localized afterward with the laser. Soft SEFI and Hard SEFI were also investigated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9163364f39f960ba38b1790bfd086b47 https://doi.org/10.1109/tns.2009.2037418 Zobrazit plný text záznamu