Study of the resistive switching behavior in Si/N:SiOx (x<2) multilayer-based MOS devices

Autor:	B. Palacios-Marquez, Z. Montiel-Gonzalez, S.A. Perez-Garcia, M. Moreno Moreno, A. Morales-Sanchez
Rok vydání:	2022
Zdroj:	2022 IEEE Latin American Electron Devices Conference (LAEDC).
DOI:	10.1109/laedc54796.2022.9908211
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9162ba9381d825074b4c4a95d896507b https://doi.org/10.1109/laedc54796.2022.9908211 Zobrazit plný text záznamu