High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices

Autor:	G. W. Charache, S. L. Ransom, D.M. Depoy, L. R. Danielson, H. K. Choi, Christine A. Wang
Rok vydání:	1999
Předmět:	Photoluminescence Materials science Physics and Astronomy (miscellaneous) Open-circuit voltage business.industry Band gap Epitaxy Gallium arsenide chemistry.chemical_compound chemistry Thermophotovoltaic Metastability Optoelectronics Quantum efficiency business
Zdroj:	Applied Physics Letters. 75:1305-1307
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.124676
Popis:	We report high-performance lattice-matched GaInAsSb/GaSb thermophotovoltaic (TPV) devices with a 0.5 eV band gap. The TPV structures were grown on GaSb substrates by organometallic vapor phase epitaxy at a lower temperature (525 °C compared to 550 °C) to improve the quality of the metastable GaInAsSb alloy. The 0.5 eV TPV devices exhibit external quantum efficiency as high as 60%, which corresponds to an internal quantum efficiency of 90%, assuming 35% reflection losses. This efficiency is comparable to the value measured for 0.53 eV devices. The ratio of the open circuit voltage to band-gap energy ratio decreases from 0.57 for 0.53 eV devices to 0.48 for 0.5 eV devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::915ae2321ec90addff126264cfcce83c https://doi.org/10.1063/1.124676 Zobrazit plný text záznamu