Improvement of Channel Mobility for Trench Metal-Oxide-Semiconductor Field Effect Transistor by Smoothing Trench Sidewall Surface

Autor:	Takashi Shinohe, Satoshi Urano, Akihiro Yahata, Tomoki Inoue
Rok vydání:	2001
Předmět:	Materials science business.industry General Engineering General Physics and Astronomy Metal Planar visual_art Electric field Trench MOSFET visual_art.visual_art_medium Optoelectronics Field-effect transistor business Smoothing Communication channel
Zdroj:	Japanese Journal of Applied Physics. 40:116
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.40.116
Popis:	Channel mobility (µeff) for a trench metal-oxide-semiconductor field effect transistor (MOSFET) can be significantly enhanced by smoothing the trench sidewall surface. A smoothed sample showed an increased µeff value, 520 cm2/Vs, at an effective electric field (E eff) of 2.7×105 V/cm, which was almost equal to that of a planar MOSFET, although it showed slightly smaller values in higher E eff regions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9152a1ce20fe73e036a7851259278e70 https://doi.org/10.1143/jjap.40.116 Zobrazit plný text záznamu