| Autor: |
Thierry Laroche, Eric Butaud, Yann Sinquin, Isabelle Huyet, Alexis Drouin, Emilie Courjon, Marie Bousquet, Alexandre Reinhardt, Sylvain Ballandras, Ionut Radu, Marie Gorisse, Alexandre Clairet, Florent Bernard |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
2018 IEEE International Ultrasonics Symposium (IUS). |
| DOI: |
10.1109/ultsym.2018.8579660 |
| Popis: |
This paper investigates advanced piezoelectric-on-insulator (POI) substrates elaborated using the Smart Cut™ technology to transfer a thin, high uniformity, single-crystal LiTaO 3 layer on top of a silicon handle wafer. These POI substrates enable the development of high quality surface acoustic wave (SAW) devices. Single-port test resonator have been built on such wafers, reaching Bode Q in excess of 1700 and coupling factors above 8 %, as the result of guided mode propagation. Resonance frequency dispersion was measured as low as 0.64 %. The thin layer stack also improves TCF down to 5.8 ppm/°C compared with conventional bulk LiTaO 3 technology and can be further reduced at desired frequencies by optimizing the multi-layer stack thicknesses. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
