Uniaxial stress apparatus for deep level transient spectroscopy studies

Autor:	J. W. Farmer, C. D. Lamp, J. M. Meese
Rok vydání:	1984
Předmět:	Deep-level transient spectroscopy Materials science Silicon Neutron diffraction chemistry.chemical_element Molecular physics Stress (mechanics) Nuclear magnetic resonance chemistry Neutron flux Stress relaxation Neutron Irradiation Instrumentation
Zdroj:	Review of Scientific Instruments. 55:210-212
ISSN:	1089-7623 0034-6748
DOI:	10.1063/1.1137725
Popis:	An apparatus for applying uniaxial stress >109 Pa at temperatures of 20–300 K is described. The apparatus is used with a deep level transient spectroscopy (DLTS) experiment, but it has more general applications. We have used this apparatus to observe the splitting of a DLTS defect level at Ec −0.17 eV in neutron irradiated silicon and have determined from the splitting, as a function of stress orientation, that the defect symmetry is consistent with the oxygen‐vacancy A‐center.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9149a3a4229f56b35b44d730009269b4 https://doi.org/10.1063/1.1137725 Zobrazit plný text záznamu