Carrier transport in heavily doped polycrystalline silicon layers after annealing by a scanning laser beam
Autor: | A.M. Yanchenko, M.I. Tarasik, A.K. Fedotov |
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Rok vydání: | 1995 |
Předmět: |
Materials science
Silicon business.industry Annealing (metallurgy) Doping General Physics and Astronomy chemistry.chemical_element Recrystallization (metallurgy) Surfaces and Interfaces General Chemistry Chemical vapor deposition engineering.material Atmospheric temperature range Condensed Matter Physics Surfaces Coatings and Films Polycrystalline silicon chemistry engineering Optoelectronics Grain boundary business |
Zdroj: | Applied Surface Science. 84:379-382 |
ISSN: | 0169-4332 |
Popis: | Results on recombinational parameters and low-temperature (4–350 K) carrier-transport measurements in heavily doped laser-beam-annealed poly-Si layers are shown. The initial films were deposited by the LPCVD method on oxidized (110) mono-Si substrates. After laser-beam recrystallization the structure of the films became columnar-like with grain sizes of about 30–100 μm. In this case the low-temperature dependencies of conductivity and I - V characteristics can be described on the basis of the percolation model of Shklovski-Efros. The results obtained have allowed the construction of a qualitative model of carrier transport in poly-Si layers in a wide temperature range. |
Databáze: | OpenAIRE |
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