Electrical transport properties of VO2 nanowire field effect transistors

Autor:	Gunho Jo, Tak-Wook Kim, Jongsun Maeng, Takhee Lee
Rok vydání:	2006
Předmět:	Materials science business.industry Scanning electron microscope Transistor Nanowire Nanotechnology law.invention Vanadium dioxide Electrical transport Si substrate Transmission electron microscopy law Optoelectronics Field-effect transistor business
Zdroj:	2006 IEEE Nanotechnology Materials and Devices Conference.
DOI:	10.1109/nmdc.2006.4388824
Popis:	The VO 2 nanowires were grown on Si 3 N 4 /Si substrate by a vapor transport method. Single crystalline rectangular structure of VO 2 nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO 2 nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9143071228aca8ec5c4e0250cce42273 https://doi.org/10.1109/nmdc.2006.4388824 Zobrazit plný text záznamu