Chemical Vapor Deposition of CuxS: Surface Contamination by Reaction Products

Autor:	Joop Schoonman, A. Goossens, Liesbeth Reijnen, Ben Meester
Rok vydání:	2005
Předmět:	Total harmonic distortion Hydrogen General Chemical Engineering Inorganic chemistry chemistry.chemical_element General Chemistry Chemical vapor deposition Contamination Atomic layer deposition chemistry Materials Chemistry Deposition (phase transition) Growth rate Thin film
Zdroj:	Chemistry of Materials. 17:4142-4148
ISSN:	1520-5002 0897-4756
DOI:	10.1021/cm035276v
Popis:	Thin films of CuxS are grown by chemical vapor deposition using Cu(thd)2 (thd = tetramethylheptanedionate), H2S, and H2 as the precursors. A deposition profile, not caused by depletion of the precursors, is present in all films. Hydrogen is needed for growth to occur; in atomic layer deposition of CuxS the reaction between Cu(thd)2 and H2S does not require H2. To explain these observations, a model is derived on the basis of competitive adsorption of Cu(thd)2 and the reaction product Hthd at the surface. With numerical calculations, the growth rate, the Cu(thd)2 concentration, and the Hthd concentration as a function of the flow axis can be simulated. A deposition profile due to competitive adsorption of Cu(thd)2 and Hthd is found.
Databáze:	OpenAIRE
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