Minority carrier lifetime of HgCdTe from photoconductivity decay method

Autor:	Joseph Reichman
Rok vydání:	1991
Předmět:	chemistry.chemical_classification Measurement method Physics and Astronomy (miscellaneous) Chemistry business.industry Photoconductivity Analytical chemistry Electron Trapping Carrier lifetime N type conductivity Optoelectronics Charge carrier business Inorganic compound
Zdroj:	Applied Physics Letters. 59:1221-1223
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.105509
Popis:	The results of an analytical study of the photoconductivity decay (PCD) method for measuring carrier lifetimes of n‐type HgCdTe show that the measurements give much higher values than the minority carrier lifetimes when trapping is significant. In contrast, for p‐type HgCdTe, the PCD method gives results equal to or less than the minority carrier lifetime under the same trapping conditions. The difference in results between n‐type and p‐type HgCdTe is due to the different recombination properties of excess electrons when they are majority carriers or minority carriers, respectively.
Databáze:	OpenAIRE
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