| Autor: |
Ashwin H. Shah, C.D. Gosmeyer, K.L. Wang, Pallab K. Chatterjee, Hisashi Shichijo |
| Rok vydání: |
1982 |
| Předmět: |
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| Zdroj: |
1982 International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.1982.190371 |
| Popis: |
A MOSFET biased in the subthreshold region is discussed as a simple means of realizing a high impedance load (100 Mohm - 50 Gohm) for NMOS sRAMs. The MOSFET is connected like a depletion load (V gs = 0 V), but has a positive threshold (0.2-0.3 V). Short-channel and narrow-width effects and temperature effects on the subthreshold load characteristics were studied with two-dimensional models and characterized experimentally. Feasibility of the subthreshold load has been demonstrated. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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