In situ etching of GaAs by AsCl3 for regrowth on AlGaAs in metalorganic vapor-phase epitaxy
| Autor: | B. E. Hammons, Hong Q. Hou, William G. Breiland |
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| Rok vydání: | 1998 |
| Předmět: |
Arrhenius equation
business.industry Chemistry Recrystallization (metallurgy) Mineralogy Activation energy Condensed Matter Physics Epitaxy Isotropic etching Volumetric flow rate Inorganic Chemistry symbols.namesake Materials Chemistry symbols Optoelectronics Metalorganic vapour phase epitaxy business Reflectometry |
| Zdroj: | Journal of Crystal Growth. 195:199-204 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(98)00733-7 |
| Popis: | In situ etching of GaAs with AsCl 3 in metalorganic vapor-phase epitaxy (MOVPE) reactor was studied with in situ reflectometry as a function of the AsCl 3 flow rate, substrate temperature, and AsH 3 flow rate during etching. A smooth and uniform etched surface was successfully achieved at substrate temperatures above 680°C. The etch rate was found to be proportional to the flow rate of AsCl 3 , and exhibited Arrhenius temperature dependence with an activation energy of ∼1 eV. The etching was also found to be very selective towards the Al composition in AlGaAs, and stopped abruptly on AlGaAs. This process has applications for MOVPE regrowth on an AlGaAs surface after a selective in situ etch of the GaAs cap layer. |
| Databáze: | OpenAIRE |
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