Phonon transport in 6H silicon carbide
| Autor: | Anthony J. Kent, D. Lehmann, N. M. Stanton |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Condensed matter physics Phonon Heat pulse Mineralogy Acoustic Phonons Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Crystal Condensed Matter::Materials Science Transverse plane chemistry.chemical_compound Quality (physics) chemistry Condensed Matter::Superconductivity Materials Chemistry Silicon carbide Condensed Matter::Strongly Correlated Electrons Electrical and Electronic Engineering |
| Zdroj: | Semiconductor Science and Technology. 18:L4-L7 |
| ISSN: | 0268-1242 |
| DOI: | 10.1088/0268-1242/18/1/102 |
| Popis: | We have used the heat pulse technique to study phonon transport in 6H–silicon carbide. We have directly detected ballistic acoustic phonons which have propagated across the substrate and have observed the arrival of phonons multiply reflected from the surfaces, suggesting high crystal quality. From the heat pulse data, we deduce the velocities of the longitudinal and transverse acoustic modes. We have used phonon imaging techniques to obtain images of the phonon focusing in 6H–silicon carbide and have compared these with the results of theoretical calculations. |
| Databáze: | OpenAIRE |
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