Characteristics of a Novel Poly-Si P-Channel Junctionless Thin-Film Transistor With Hybrid P/N-Substrate

Autor:	Hung-Bin Chen, Vasanthan Thirunavukkarasu, Ya-Chi Cheng, Chun-Yen Chang, Chi-Shen Shao, Jun-Ji Su, Yung-Chun Wu
Rok vydání:	2015
Předmět:	Materials science Equivalent series resistance Doping Transistor Analytical chemistry Nanowire Nanotechnology Substrate (electronics) Electronic Optical and Magnetic Materials law.invention P channel law Thin-film transistor Subthreshold swing Electrical and Electronic Engineering
Zdroj:	IEEE Electron Device Letters. 36:159-161
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2014.2379673
Popis:	This letter for the first time proposes a hybrid P/N substrate as a poly-Si p-channel for junctionless thin-film transistor (JL-TFT) with nanowires and omega-gate structures. The hybrid P/N JL-TFT exhibits a high $I_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ / $I_{\mathrm {\mathrm{{\scriptstyle OFF}}}}$ current ratio (> 107), a steep subthreshold swing of 64 mV/dec, and a low drain-induced barrier lowering value of 3 mV/V by reducing the effective channel thickness that is caused by the channel/substrate junction. In addition, the series resistance for novel P/N JL-TFT with channel thickness ( $T_{\mathrm {\mathbf {ch}}}$ ) of 24 nm is 50 times smaller than conventional JL-TFT with $T_{\mathrm {\mathbf {ch}}}=12$ nm. This hybrid P/N structure can break through the strict limitation of JL-TFT channel thickness.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::910a42c07d046137e1556b6c98f93020 https://doi.org/10.1109/led.2014.2379673 Zobrazit plný text záznamu